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- 教授姓名
- 郭浩中
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- 聯絡電話
- 5712121ext.31986
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- 研究室位置
- 田家炳大樓315A室
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- E-mail
- hckuo0206@nycu.edu.tw
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- 研究專長
- III-V(Nitride)高速半導體雷射技術及應用研究
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- 招收學生要求
- 對光電半導體與元件有興趣，
如LED, solar cell, 以及半導體雷射，
Physics background (國立大學 preferred)
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- 實驗室名稱
- 尖端奈米光子實驗室暨半導體雷射技術實驗室
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- 實驗室電話
- 31234, 56333
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- 實驗室位置
- 光復校區田家炳光電大樓3樓
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- 研究方向
- The research activities in this laboratory include the following technical areas: 1. Research on GaN-based materials and light emitters. 2. Development of visible and infrared diode lasers including edge emitting and vertical cavity surface emitting lasers based on III-V compounds. 3. Study of quantum confined structures and nano-photonics including photonic crystal, micro-cavity, quantum well, quantum dot and novel nanostructures. 4. Investigation of cavity quantum electrodynamics in GaN-based high-Q microcavities 5. Development of slow light using semiconductor diode lasers. 6. Development of high efficiency advanced solar cell based on III-V compounds
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- 實驗室名稱
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- 實驗室電話
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- 實驗室位置
- 工程五館 250室
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- 研究方向
- 1. III-V Nitride compound semiconductor laser/LED material growth and devices fabrication.
2. III-V Nitride Nano-technology - fabrication and device applications
3. Photonics SOC - Integration of III-V devices and driver circuit.
4. III-V compound semiconductor Device Physics and high speed Characterization. -
- 可招收推甄碩士生名額
- 4.0
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- 已招收推甄碩士生名額
- 0.0
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- 可招收入學考碩士生名額
- 1.0
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- 已招收入學考碩士生名額
- 0.0
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- 可招收博士生名額
- 1.0
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- 已招收博士生名額
- 0.0
English