論文題目: First Demonstration of BEOL-compatible ALD-deposited 2 nm-thick Indium-Tungsten-Tin-Oxide (IWTO) TFTs with superior short-channel electrical characteristics: Achieving Enhancement-mode V_TH,I_ON/OFF> 10¹⁰, SS ~ 63.3 mV/dec.

學生成員: 蔣宗哲、張羽青、黃啟瑞、徐崇軒